Lecture 5: Micromachining
26 where D=diffusivity of oxide in silicon,, D= x 1016cm2/s at 900oC d o=initial oxide layer (~200 in dry oxidation,=0 for wet oxidation) k s=surface reaction rate constant N o=concentration of oxygen molecules in the carrier gas = x 1016molecules/cm3 in dry o 2 at 1000 oC and 1atm =3000 x 1016 molecules/cm3 in water vapor at the same temperature and pressure